Semiconductor Process and Device Simulation
Mengjia Zhu
EEE 533 Semiconduct Process/Device Sim
In this paper, the threshold voltage of AlN metal-semiconductor field effect transistors (MESFETs) has been simulated and compared to the theoretical equations using Silvaco TCAD tools under different doping levels, different types of doping and different thickness of the n-AlN channel. The transfer characteristics (drain current (Id) versus gate voltage (Vg) relationship) were also investigated. The simulation results showed a linear decrease in threshold voltage when the thickness of the n-AlN increases, a quadratic drop in threshold voltage when the doping level increases and a larger decrease when the doping type is changed.
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