Fabrication of NMOS Transistors
Mengjia Zhu
ECE 220A Semiconductor Device
In this lab, the fabrication of semiconductor electronic devices, including p-n junction diodes, metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), MOS capacitors and resistors are demonstrated. These aforementioned devices are fabricated from a p-type silicon wafer through multiple stages of lithography, oxidation, diffusion, etching and deposition. Multiple measurements are conducted along the process to validate the success of the execution. The final device is characterized with electrical probes and the I-V and C-V characteristics are measured to evaluate the functional device.
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